s mhop microelectronics c orp. a stu/d606s product summary v dss i d r ds(on) (m ) max 60v 21a 68 @ vgs=4.5v 56 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel logic level enhancement mode field effect transistor ver 1.2 www.samhop.com.tw dec,03,2012 1 details are subject to change without notice. g s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) g s d s t d s e ri e s to - 2 5 1 ( i - p a k ) symbol v ds v gs i dm a i d units parameter 60 21 61 v v 20 gate-source voltage drain-source voltage absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a t c =25 c w p d c 50 -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 2.5 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj sigle pulse avalanche energy d t c =70 c w a 16.8 32 25 green product
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) 1.0 v 45 g fs 16 s c iss 825 pf c oss 72 pf c rss 48 pf q g 13 nc 12.5 38 6 t d(on) 13.5 ns t r ns t d(off) ns t f ns v ds =30v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen =3.3 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =10.5a v ds =20v , i d =10.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =9.5a 56 50 68 m ohm f=1.0mhz stu/d606s ver 1.2 www.samhop.com.tw dec,03,2012 2 1.8 3.0 v sd nc q gs nc q gd 1.6 3.4 gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =10.5a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1.7a 0.79 1.3 v nc 6.3 v ds =30v,i d =10.5a,v gs =10v v ds =30v,i d =10.5a,v gs =4.5v notes a.drain current limited by maximum junction temperature. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) _ _ c c
stu/d606s ver 1.2 www.samhop.com.tw dec,03,2012 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 30 24 18 12 6 0 0 0.5 1 1.5 2 2.5 3 v gs =4v v gs =5v v gs =10v -55 c 25 c 20 16 12 8 0 0 0.8 2.4 3.2 4.0 4.8 tj=125 c 1.6 4 120 100 80 60 40 20 1 612 18 24 30 1 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0.0 25 50 75 150 100 125 v gs =4.5v i d =9.5a v gs =10v i d =10.5a 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.3 1.2 1.1 1.0 0.9 0.8 0.7 i d =250ua v gs =3.5v v gs =3v 0
stu/d606s ver 1.2 www.samhop.com.tw dec,03,2012 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current 144 120 96 72 48 24 0 24 68 10 0 25 c 125 c i d =10.5a 75 c 20.0 10.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 75 c 25 c 125 c 0 5 10 15 20 25 30 1200 1000 800 600 400 200 0 ciss coss crss 10 8 6 4 2 0 024 6 810121416 v ds =30v i d =10.5a 100 10 1 1 610 60100 60 600 300 220 td(on) t d(off) tf vds =30v,id=1a vgs =10v tr 200 100 10 1 0.1 1 10 60 1 0ms d c 1 m s r ds (on ) lim it 10 0 us v gs =10v s ingle p uls e t a =25 c
t p v (br )dss i as figure 13b. o fr m w ave s u nc l am p e d in d u ct i ve stu/d606s ver 1.2 www.samhop.com.tw dec,03,2012 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datas heet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse figure 13a. uncamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - 20v v dd
stu/d606s ver 1.2 www.samhop.com.tw dec,03,2012 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d606s ver 1.2 www.samhop.com.tw dec,03,2012 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
stu/d606s ver 1.2 www.samhop.com.tw dec,03,2012 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
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